The data are simulated by calculating the diffraction pattern from LiF(100) with a model microstructure consisting of coherently diffracting domains. The lattice orientation and longitudinal strain is assumed uniform within domains, but they vary from domain to domain with Gaussian distributions. Simulations using
such a model are in good agreement with the measured diffraction patterns. The principal finding from the present work is that synchrotron x-rays can provide real-time data regarding microstructure changes SBE-β-CD accompanying shock-induced deformation and structural changes.”
“SETTING: The Fujian District in China has a high migrant worker population. Although tuberculosis (TB) among migrants is a serious threat to public health in Fujian, little is known about the molecular characteristics of TB isolates in this population.
OBJECTIVE: MAPK inhibitor To investigate the genetic profile of TB among the migrant population in Fujian.
RESULTS: Our study enrolled 243 pulmonary TB patients registered in Fujian. Our data demonstrated that the Beijing genotype was the most common genotype in Fujian, and that the proportion of migrants with the Beijing genotype was significantly higher than that of permanent
residents. Furthermore, the population structure of Mycobacterium tuberculosis strains in Fujian was diverse, with no difference in the distribution of mycobacterial interspersed repetitive units-variable number of tandem repeat (MIRU-VNTR) subgroups between the migrant and permanent populations. In addition, the discriminatory power of MIRU-VNTR in this study was higher than that found in other regions of China, possibly due to the high
percentage of migrants in Fujian.
CONCLUSION: The Beijing genotype was the predominant genotype in Fujian. TB strains isolated from this migrant population revealed a genetic profile similar to that of the permanent population. Improvement in public medical and insurance Trk receptor inhibitor programmes for migrants might be crucial in the effective control of TB in Fujian.”
“Vacancy-type defects in AlN grown by metal-organic vapor phase epitaxy (MOVPE) and lateral epitaxial overgrowth (LEO) using halide vapor phase epitaxy were probed by a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured and compared to the spectra calculated using the projector augmented-wave method. For MOVPE-AlN, the concentration of vacancy-type defects was high near the interface between AlN and the GaN buffer layer, and the defect-rich region expanded from the interface toward the surface when the NH(3) flow rate increased. For the sample grown on the AlN buffer layer, however, the introduction of such defects was suppressed. For LEO-AlN, distinct deep emission peaks at 3-6 eV were observed in cathodoluminescence spectra.