(C) 2011 American Institute of Physics. [doi:10.1063/1.3605522]“
“Bio-based poly(trimethylene terephthalate) (PTT) and poly(ether esteramide) selleck chemical (PEEA) blends were prepared by melt processing with

varying weight ratios (0-20 wt %) of polycarbonate (PC). The blends were characterized by differential scanning calorimetry (DSC), dynamic mechanical analysis (DMA), polarized light microscopy (PLM), and transmission electron microscopy (TEM). Electrostatic performance was also investigated for those PTT blends since PEEA is known as an ion conductive polymer. DMA suggests that PC is miscible with PEEA and selectively goes into PEEA phase in case of ternary blends of PTT/PEEA/PC. The glass transition temperature (T-g) for PC/PEEA is well predicted by

Gordon Taylor equation. Addition of PC retards the electrostatic decay performance of PTT/PEEA blends by restricting the motion of ions in PEEA through increasing the T-g of PEEA. (C) 2011 Wiley Periodicals, Inc. J Appl Polym Sci 123: 1056-1067, 2012″
“We report on nitrogen (N) and copper (Cu) doping in MgxZn1-xO films grown via remote-plasma-enhanced metalorganic chemical vapor deposition and their impact on p-type conduction. The MgxZn1-xO films showed a transformation of conductivity from n-type this website to p-type with increasing Mg content (x), which occurred at x = 0.078 with N-2 carrier gas and x = 0.106 with H-2 carrier gas. A comparison of the temperature dependent photoluminescence and the Hall effect measurement data revealed that the transformation of the conduction type with the increasing Mg content of MgxZn1-xO films is due to a conduction band up shift that causes the enhancement of the activation energy of donor states and the reduction of n-type residual electron concentrations. The p-type conductivity of MgxZn1-xO films with a low value of Mg content with N-2 carrier gas was due to the contribution from the (N)(O) acceptor. Though N doped MgxZn1-xO (MgxZn1-xO:N) films showed p-type conductivity for x

> 0.078, the N and Cu co-doped MgxZn1-xO (MgxZn1-xO:Cu,N) films showed n-type conduction with larger electron concentrations. Despite being a check details good acceptor, Cu doped MgxZn1-xO films had an n-type conductivity that was due to the contribution from shallow donors such as Cu-i and CusZni. Moreover, the reduction of the Mg content of MgxZn1-xO:Cu,N films led to an increase in the residual electron concentrations and contributed to the n-type conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3603038]“
“In the past work, the shear resistance of pure poly(n-butyl acrylate) was low, even incorporation of inorganic filler, silica in the composition. It is well-known that the copolymerization of n-butyl acrylate (BA) with methyl methacrylate (MMA) will increase the glass transition temperature, and enhance the shear resistance of acrylic polymers.