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CrossRef 17. Cheng SL, Lu SW, Chen H: Interfacial reactions of 2-D periodic arrays of Ni metal dots on (001) Si. J Phys Chem Solids 2008, 69:620–624.CrossRef 18. Huang Z, Fang H, Zhu J: Fabrication of silicon nanowire this website arrays with controlled diameter, length, and density. Adv Mater 2007, 19:744–748.CrossRef 19. Cambino JP, Colgan EC: Silicides and ohmic contacts. Mater Chem Phys 1998, 52:99–146.CrossRef 20. Cheng SL, Lu SW, Wong SL, Chen H: Growth of size-tunable periodic Ni silicide nanodot arrays on silicon substrates. Appl Surf Sci 2006, 253:2071–2077.CrossRef 21. Lu KC, Wu WW, Ouyang H, Lin YC, Huang Y, Wang CW, Wu ZW, Huang CW, Chen LJ, Tu KN: The influence of surface

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Chen LJ: Silicide Technology for Integrated Circuits. London: The Institution of Electrical Engineers; 2004.CrossRef Competing interests The authors declare that they have no competing Y-27632 2HCl interests. Authors’ contributions HFH supervised the overall study, discussed the results, and wrote the manuscript. WRH fabricated the Ni-silicide/Si heterostructured nanowire arrays and analyzed the results. THC performed TEM measurement. HYW performed SEM measurement. CAC helped in the analysis of TEM results. All authors read and approved the final manuscript.”
“Background There is an increasing need for sources and detectors for mid-infrared (IR) spectral region due to the broad range of medical and industrial applications

such as measurement of skin temperature, detection of cancer or infection, air pollution monitoring, meteorological research, and remote temperature sensing. Quantum well infrared photodetectors (QWIPs) utilizing intersubband transitions have been successful in these applications [1]. The intersubband transition energy in the quantum well is easily tunable by varying the quantum well width and barrier height. Also, there is a potential for the fabrication of uniform detector arrays with large area. However, QWIPs have drawbacks such as intrinsic insensitivity to the normal incidence radiation and a relatively large dark current. In the past several years, there has been a surge of interest in nanostructures that exhibit quantum confinement in three dimensions, which are known as quantum dots (QDs).

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