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Chen LJ: Silicide Technology for Integrated Circuits. London: The Institution of Electrical Engineers; 2004.CrossRef Competing interests The authors declare that they have no competing Y-27632 2HCl interests. Authors’ contributions HFH supervised the overall study, discussed the results, and wrote the manuscript. WRH fabricated the Ni-silicide/Si heterostructured nanowire arrays and analyzed the results. THC performed TEM measurement. HYW performed SEM measurement. CAC helped in the analysis of TEM results. All authors read and approved the final manuscript.”
“Background There is an increasing need for sources and detectors for mid-infrared (IR) spectral region due to the broad range of medical and industrial applications
such as measurement of skin temperature, detection of cancer or infection, air pollution monitoring, meteorological research, and remote temperature sensing. Quantum well infrared photodetectors (QWIPs) utilizing intersubband transitions have been successful in these applications . The intersubband transition energy in the quantum well is easily tunable by varying the quantum well width and barrier height. Also, there is a potential for the fabrication of uniform detector arrays with large area. However, QWIPs have drawbacks such as intrinsic insensitivity to the normal incidence radiation and a relatively large dark current. In the past several years, there has been a surge of interest in nanostructures that exhibit quantum confinement in three dimensions, which are known as quantum dots (QDs).