Phys Rev B 2008, 78:245419.CrossRef 15. Hsu S-Y, Jen T-H, Lin E-H, Wei P-K: Near-field coupling method for subwavelength surface plasmon polariton waveguides. Plasmonics 2011, 6:557–563. 10.1007/s11468-011-9236-1CrossRef 16. Han ZH, He SL: Multimode interference effect in plasmonic subwavelength waveguides and an ultra-compact power splitter. Optic Comm 2007, 278:199–203. 10.1016/j.optcom.2007.05.058CrossRef 17. Pitilakis
A, Kriezis EE: Longitudinal 2 × 2 switching configurations based on thermo-optically addressed dielectric-loaded plasmonic waveguides. J Lightwave Tech 2011, 29:2636–2646.CrossRef 18. Rajarajan M, Themistos C, Rahman BMA, Grattan KTV: Characterization of metal-clad TE/TM mode splitters using the finite element method.
J Lightwave Tech 1997, 15:2264–2269. SB525334 solubility dmso 10.1109/50.643553CrossRef 19. Scarmozzino selleck chemical R, Gopinath A, Pregla R, Helfert S: Numerical techniques for modeling guided-wave photonic devices. IEEE J Sel Top Quantum Electron 2000, 6:150–162.CrossRef 20. Holmgaard T, Chen Z, Bozhevolnyi SI, Markey L, Dereux A: Design and characterization of dielectric-loaded plasmonic directional couplers. J Lightwave Tech 2009, 27:5521–5528.CrossRef 21. Randhawa S, Lacheze S, Renger J, Bouhelier A, de Lamaestre RE, Dereux A, Quidant R: Performance of electro-optical plasmonic ring resonators at telecom wavelengths. Optics Express 2012, 20:2354–2362. 10.1364/OE.20.002354CrossRef 22. Wei H, Li Z, Tian X, Wang Z, Cong F, Liu N, Zhang S, Nordlander P, Halas NJ, Xu H: Quantum dot-based local field imaging reveals plasmon-based interferometric logic in silver nanowire networks. Nano letters 2011, 11:471–475. 10.1021/nl103228bCrossRef Idoxuridine 23. Wei H, Wang Z, Tian X, Kall M, Xu H: Cascaded logic gates in nanophotonic plasmon networks. Nat Comm 2011, 2:387.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions MYP, EHL, and PKW designed the near-field excitation system. MYP fabricated and measured all the samples in this article. MYP, LW, and PKW performed data analysis. All the authors read and approved the final manuscript.”
“Background
Top-down and bottom-up methods are two types of approaches used in nanotechnology and nanofabrication [1]. The bottom-up approach is more advantageous than the top-down approach because the former has a better chance of producing nanostructures with less defects, more homogenous ARRY-438162 ic50 chemical composition, and better short- and long-range ordering [2]. Semiconductor nanorods (NRs) and nanowires possess convenient and useful physical, electrical, and optoelectronic properties, and thus, they are highly suitable for diverse applications [3, 4]. ZnO, one of the II-VI semiconductor materials, has attracted considerable interest because of its wide bandgap (approximately 3.37 eV), high exciton binding energy (approximately 60 meV), and long-term stability [5, 6].